參數(shù)資料
型號(hào)： J309
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： JFET VHF/UHF Amplifiers
中文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
封裝： CASE 29-11, TO-226, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 160K
代理商： J309
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VGS
IGF
PD
25
Vdc
Gate–Source Voltage
25
Vdc
Forward Gate Current
10
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
350
2.8
mW
mW/
°
C
Junction Temperature Range
TJ
Tstg
–65 to +125
°
C
Storage Temperature Range
–65 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0
μ
Adc, VDS = 0)
V(BR)GSS
–25
—
—
Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0, TA = 25
°
C)
(VGS = –15 Vdc, VDS = 0, TA = +125
°
C)
IGSS
—
—
—
—
–1.0
–1.0
nAdc
μ
Adc
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
VGS(off)
–1.0
–1.0
–2.0
—
—
—
–6.5
–4.0
–6.5
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
IDSS
12
12
24
—
—
—
60
30
60
mAdc
Gate–Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VGS(f)
—
—
1.0
Vdc
Common–Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(yis)
—
—
—
0.7
0.7
0.5
—
—
—
mmhos
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
—
0.25
—
mmhos
Common–Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Gpg
—
16
—
dB
1. Pulse Test: Pulse Width
300
μ
s, Duty Cycle
3.0%.
Order this document
by J308/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
23
1 DRAIN
2 SOURCE
3
GATE
相關(guān)PDF資料
PDF描述
J310 JFET VHF/UHF Amplifiers
J309 N-Channel RF Amplifier
J308 N-Channel JFET High Frequency Amplifier
J309 N-Channel JFET High Frequency Amplifier
J310 N-Channel JFET High Frequency Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
J309 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR JFET N TO-92
J309_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier
J309_12 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET VHF/UHF Amplifiers N.Channel . Depletion
J309_D26Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
J309_D27Z 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*