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參數(shù)資料
| 型號(hào)： | J680 |
| 廠(chǎng)商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P-Channel MOS Type (ヰ-MOS V) |
| 中文描述： | 場(chǎng)效應(yīng)晶體管硅P溝道MOS型（ヰ，馬鞍山五） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 209K |
| 代理商： | J680 |
2SJ680
2004-12-24
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (
π
-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: R
DS (ON)
= 1.6
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
100
μ
A (max) (V
DS
=
200 V)
Enhancement model: V
th
=
1.5 ~
3.5 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DSS
200
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
200
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
2.5
Drain current
Pulse
(Note 1)
I
DP
10
A
Drain power dissipation (Tc
=
25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
97.5
mJ
Avalanche current
I
AR
2.5
A
Repetitive avalanche energy (Note 3)
E
AR
2.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
50 V, Tch
=
25°C (initial), L
=
25.2 mH, I
AR
=
2.5 A R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
０．６±０．１５
０．８ MAX．
１．1 MAX．
２
１
２
３
０．６±０．１５
０．６ MAX
０．６ MAX．
１．１±０．２
６．５±０．２
５
１
２．３
２．３
５
５．２±０．２
０．９
４
１
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