型號(hào) 廠商 描述
irf140smd
2 3 4 5		 SEMELAB LTD N-CHANNEL POWER MOSFET
irf250
2		 SEMELAB LTD N-CHANNEL POWER MOSFET
irf250
2		 SAMSUNG SEMICONDUCTOR CO. LTD. N-CHANNEL POWER MOSFETS
irf250
2		 Electronic Theatre Controls, Inc. 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
irf250
2		 HARRIS SEMICONDUCTOR 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
irf250smd
2		 SEMELAB LTD N.CHANNEL POWER MOSFET
irf510a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP Advanced Power MOSFET
irf520a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為100V，導(dǎo)通電阻為0.2Ω，漏電流為9.2A）)
irf540a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP Advanced Power MOSFET
irf614
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為2.0Ω，漏電流為2.8A）)
irf620a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為200V，導(dǎo)通電阻為0.8Ω，漏電流為5A）)
irf634s
2 3 4 5 6 7		 Fairchild Semiconductor Corporation N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.45Ω，漏電流為8.1A）)
irf634
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.45Ω，漏電流為8.1A）)
irf640a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP L E D,YELLOW,50 DEG VIEW ANGLE
irf644
2 3 4 5 6 7 8 9 10		 FAIRCHILD SEMICONDUCTOR CORP 250V N-Channel MOSFET
irf644
2 3 4 5 6 7 8 9 10		 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
irf644n
2 3 4 5 6 7 8 9 10		 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
irf644nl
2 3 4 5 6 7 8 9 10		 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
irf644ns
2 3 4 5 6 7 8 9 10		 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
irf644nstrl
2 3 4 5 6 7 8 9 10		 International Rectifier TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB
irf644nstrr
2 3 4 5 6 7 8 9 10		 International Rectifier TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB
irf644b
2 3 4 5 6 7 8 9 10		 FAIRCHILD SEMICONDUCTOR CORP 250V N-Channel MOSFET
irfs644b
2 3 4 5 6 7 8 9 10		 FAIRCHILD SEMICONDUCTOR CORP 250V N-Channel MOSFET
irf650a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為200V，導(dǎo)通電阻為0.85Ω，漏電流為28A）)
irf710-713
2 3 4 5		 Fairchild Semiconductor Corporation N-Channel Power MOSFETs, 2.25A, 350-400V
irf711
2 3 4 5		 Fairchild Semiconductor Corporation N-Channel Power MOSFETs, 2.25A, 350-400V
irf712
2 3 4 5		 Fairchild Semiconductor Corporation TRI CON SKT 14 GLD ST/LO
irf713
2 3 4 5		 Fairchild Semiconductor Corporation Connector Contact,SKT,CRIMP Terminal
irf710b
2 3 4 5 6 7 8 9 10		 FAIRCHILD SEMICONDUCTOR CORP 400V N-Channel MOSFET
irfs710b
2 3 4 5 6 7 8 9 10		 FAIRCHILD SEMICONDUCTOR CORP 400V N-Channel MOSFET
irf710
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為3.6Ω，漏電流為2A）)
irf720a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為1.8Ω，漏電流為3.3A）)
irf7401
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Analog Devices, Inc. Thermoelectric Cooler Controller
irf7404
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 International Rectifier HEXFET Power MOSFET
irf7401
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 International Rectifier Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
irf7404
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Analog Devices, Inc. Thermoelectric Cooler Controller
irf7233
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Analog Devices, Inc. Thermoelectric Cooler Controller
irf750a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為0.3Ω，漏電流為15A）)
irf750
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為0.3Ω，漏電流為15A）)
irf820a
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為3.0Ω，漏電流為2.5A）)
irf820s
2 3 4 5 6 7		 Fairchild Semiconductor Corporation N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為3.0Ω，漏電流為2.5A）)
irf840s
2 3 4 5 6 7		 Fairchild Semiconductor Corporation N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.85Ω，漏電流為8A）)
irf9521
2		 Supertex, Inc. P-Channel Enhancement-Mode Vertical DMOS Power FETs
irf9522
2		 Supertex, Inc. P-Channel Enhancement-Mode Vertical DMOS Power FETs
irf9523
2		 Supertex, Inc. P-Channel Enhancement-Mode Vertical DMOS Power FETs
irfd120
2 3 4 5 6 7		 FAIRCHILD SEMICONDUCTOR CORP 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
irfd120
2 3 4 5 6 7		 Harris Corporation 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs
irfd120
2 3 4 5 6 7		 INTERSIL CORP 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
irfd120
2 3 4 5 6 7		 International Rectifier Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)
irfd9014pbf
2 3 4 5 6 7 8 9		 VISHAY SEMICONDUCTORS MOSFET P-CH 60V 1.1A 4-DIP