型號(hào) | 廠商 | 描述 |
2n6212 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(2A, 35W) |
2n6213 2 3 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(2A, 35W) |
2n6261 2 |
SEMELAB LTD | HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR |
2n6261 2 |
Hometaxial-Base Medium Power Silicon NPN Transistor(中等功率、外延均勻基區(qū)NPN晶體管) | |
2n6261 2 |
CENTRAL SEMICONDUCTOR CORP | Power Transistors |
2n6271 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
2n6688 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | TO-3 | |
2n6583 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
2n6686 |
SEMELAB LTD | Bipolar NPN Device |
2n6581 |
SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
2n6290 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(7A,40W) |
2n6111 2 3 4 |
意法半導(dǎo)體 | SILICON PNP SWITCHING TRANSISTORS |
2n6107 2 3 4 |
意法半導(dǎo)體 | SILICON PNP SWITCHING TRANSISTORS |
2n6290 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6109 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6111 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6107 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6288 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6292 2 3 4 |
Boca Semiconductor Corp. | EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
2n6290 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | CONNECTOR ACCESSORY |
2n6107 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
2n6109 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
2n6111 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
2n6288 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
2n6292 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | NPN SILICON TRANSISTOR |
2n6111 2 3 4 |
ON SEMICONDUCTOR | Complementary Silicon Plastic Power Transistors |
2n6107 2 3 4 |
ON SEMICONDUCTOR | Complementary Silicon Plastic Power Transistors |
2n6109 2 3 4 |
ON SEMICONDUCTOR | POWER TRANSISTORS COMPLEMENTARY SILICON |
2n6109 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(7A,40W) |
2n6111 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(7A,40W) |
2n6107 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(7A,40W) |
2n6288 2 3 4 |
MOSPEC SEMICONDUCTOR CORP. | POWER TRANSISTORS(7A,40W) |
2n6292 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(7A,40W) |
2n6298 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(8A, 75W) |
2n6298 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
2n6299 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
2n6300 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
2n6301 2 3 4 |
Boca Semiconductor Corp. | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
2n6298 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | Power Transistors |
2n6299 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | Power Transistors |
2n6300 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | Power Transistors |
2n6301 2 3 4 |
CENTRAL SEMICONDUCTOR CORP | 75 OHM BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 2; FREQUENCY RANGE: 10 - 1,000 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM INSERTION LOSS: 1.50 dB |
2n6298 2 3 4 |
MICROSEMI CORP | PNP DARLINGTON POWER SILICON TRANSISTOR |
2n6299 2 3 4 |
MICROSEMI CORP | PNP DARLINGTON POWER SILICON TRANSISTOR |
2n6300 2 3 4 |
MICROSEMI CORP-LAWRENCE | PNP DARLINGTON POWER SILICON TRANSISTOR |
2n6301 2 3 4 |
MICROSEMI CORP | PNP DARLINGTON POWER SILICON TRANSISTOR |
2n6299 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(8A, 75W) |
2n6300 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(8A, 75W) |
2n6301 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(8A, 75W) |
2n6316 2 3 4 |
MOSPEC SEMICONDUCTOR CORP | POWER TRANSISTORS(7.0A,90W) |