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參數(shù)資料
| 型號： | 2N6261 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Transistors |
| 中文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | 2N6261 |
Parameter
Collector Cut-off Current
with base open
Test Conditions
Min.
Typ.
Max.
Unit
mA
V
—
V
MHz
0.5
0.5
1.0
0.2
80
85
5
25
100
0.5
1.5
0.03
I
CEO
I
CEV
I
EBO
V
CEO(sus)
V
CER(sus)
h
FE
V
CE(sat)
V
BE
f
hfe
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk2N6261
7/00
V
CE
= 60V
I
B
= 0
V
CE
= 80V
V
BE
= -1.5V
T
c
= 150°C
I
B
= 0
V
BE
= -7V
I
C
= 0.1A
I
B
= 0
V
BE
= 5V
(R
BE
) = 100
W
V
CE
= 2V
V
CE
= 2V
I
C
= 4A
I
C
= 1.5A
I
C
= 1.5A
I
B
= .0.15A
V
CE
= 2V
I
C
= 1.5
V
CE
= 4V
I
C
= 0.1
Collector – Cut-off Current
Emitter Cut-off Current
Collector – Emitter Sustaining
Voltage with base open*
External Base to Emitter
Resistance
D.C Forward Current*
Collector to Emitter Saturation
Voltage*
Base – Emitter Voltage
Common Emitter Small Signal
Short Circuit, Forward Current
Transfer Ratio Cut off
Frequency
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
*
Pulse test tp =300
m
s
d ￡
1.8%
相關(guān)PDF資料 |
PDF描述 |
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| 2N6583 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 2N6686 | Bipolar NPN Device |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6262 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N6263 | 制造商:Harris Corporation 功能描述: |
| 2N6264 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6269 | 制造商:UNK 功能描述: |
| 2N627 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-3 |
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