型號(hào) 廠商 描述
m27c512-45xb1e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-45xb1f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c1024-45xb1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c512-45xb1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c1024-45xb1x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c512-45xb1x
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 CABLE SMA/BNC 12 RG-58
m27c512-45xb3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit (64K x8) UV EPROM and OTP EPROM
m58mr064dzc
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
m58wr064et10zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
m58wr064et70zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 BERGSTRIP .100CC SR STRAIGHT
m58wr064et80zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 HDR P R 4P PW N 1X4 .100TQ
m41st84ymq
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS
m27c1024-55f1x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c512-45b6e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c1024-35b7x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-45b7x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-55b7x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-15b7x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m25p10
2 3 4 5 6 7		 意法半導(dǎo)體 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface
m28r400ctt90zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
m28r400ctt90zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
m27c512-45xc1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit (64K x8) UV EPROM and OTP EPROM
m27c512-45xc1e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-15xc1e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-25xc1e
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-45xc1f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-15xc1f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c512-25xc1f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m27c1024-35xc1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-45xc1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-55xc1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c1024-15xc1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m28w320fsu70za1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories
m74hc27rm13tr
2 3 4 5 6 7 8 9		 意法半導(dǎo)體 RESISTOR 100 OHM 50 W 10% WW
m74hc27ttr
2 3 4 5 6 7 8 9		 意法半導(dǎo)體 TRIPLE 3-INPUT NOR GATE
m74hc4017ttr
2 3 4 5 6 7 8 9 10 11 12		 意法半導(dǎo)體 Selector Switch; Contact Current Max:10A; No. of Poles:2; No. of Switch Positions:3; Circuitry:DPST-2NO
m27c1024-80xb1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c512-80xb1tr
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL;
m27c1024-80xb1x
2 3 4 5 6 7 8 9 10 11 12 13 14 15		 意法半導(dǎo)體 1 Mbit 64Kb x16 UV EPROM and OTP EPROM
m27c512-80xb1x
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 512 Kbit 64Kb x8 UV EPROM and OTP EPROM
m74hc86b1
2 3 4 5 6 7 8 9		 意法半導(dǎo)體 QUAD EXCLUSIVE OR GATE
m74hc86b1r
2 3 4 5 6 7 8 9		 意法半導(dǎo)體 QUAD EXCLUSIVE OR GATE
m74hc86m1r
2 3 4 5 6 7 8 9		 意法半導(dǎo)體 QUAD EXCLUSIVE OR GATE
m95040-rbn3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock
m58wr128eb10zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
m59dr032a120n6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr032a120zb1t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr032a120zb6t
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr032an
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
m59dr032azb
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory