| 型號 | 廠商 | 描述 |
| m29f100b-b70m3t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
| m27c512-10b1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10b1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85 |
| m27c512-10b1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10b1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10b3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 |
| m27c512-10b6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 |
| m27c512-10c1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit (64K x8) UV EPROM and OTP EPROM |
| m27c512-10c1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10c1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10c1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-10c1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-10c6tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-10f1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m28w320ebb85n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebb85n6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 10.6 V; V<sub>Z</sub> min.: 9.4 V; V<sub>Z</sub> nom: 10 V |
| m28w320ebb85n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 11.6 V; V<sub>Z</sub> min.: 10.4 V; V<sub>Z</sub> nom: 11 V |
| m28w320ebb85zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 12.7 V; V<sub>Z</sub> min.: 11.4 V; V<sub>Z</sub> nom: 12 V |
| m28w320ebb85zb6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 14.1 V; V<sub>Z</sub> min.: 12.4 V; V<sub>Z</sub> nom: 13 V |
| m28w320ebb85zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 15.6 V; V<sub>Z</sub> min.: 13.8 V; V<sub>Z</sub> nom: 15 V |
| m28w320ebb90n1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.6 V; V<sub>Z</sub> min.: 2.2 V; V<sub>Z</sub> nom: 2.4 V |
| m28w320ebb90n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 2.9 V; V<sub>Z</sub> min.: 2.5 V; V<sub>Z</sub> nom: 2.7 V |
| m28w320ebb90n6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.2 V; V<sub>Z</sub> min.: 2.8 V; V<sub>Z</sub> nom: 3 V |
| m28w320ebb90n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Voltage regulator double diodes - Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; P<sub>tot</sub>: 350 mW; P<sub>ZSM</sub>: 40 W; Tolerance +/- %: appr. 5% ; V<sub>Z</sub> max.: 3.5 V; V<sub>Z</sub> min.: 3.1 V; V<sub>Z</sub> nom: 3.3 V |
| m28w320ebb90zb1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebb90zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebb90zb6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebb90zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70n1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70n6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70zb1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ebt70zb6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | surface mount silicon Zener diodes |
| m28w320ecb10zb6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ecb10zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ect70n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ect70n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ect70n6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320ect70n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| m28w320fsb70za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories |
| m28w320fst 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories |
| m28w320fst70za1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories |