參數(shù)資料
型號: DAC1005D750HW
廠商: NXP Semiconductors N.V.
元件分類: 外設(shè)及接口
英文描述: Dual 10-bit DAC, up to 750 Msps; 2x 4x and 8x interpolating
封裝: DAC1005D750HW/C1<SOT638-1 (HTQFP100)|<<http://www.nxp.com/packages/SOT638-1.html<1<Always Pb-free,;DAC1005D750HW/C1<SOT638-1 (HTQFP100)|<<http://www.nxp.com/packages/SOT6
文件頁數(shù): 12/42頁
文件大小: 353K
代理商: DAC1005D750HW
DAC1005D750
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 June 2011
12 of 42
NXP Semiconductors
DAC1005D750
Dual 10-bit DAC, up to 750 Msps; 4x and 8x interpolating
[1]
D = guaranteed by design; C = guaranteed by characterization; I = 100 % industrially tested.
[2]
CLKP and CLKN inputs are at differential LVDS levels. An external differential resistor with a value of between 80
and 120
should
be connected across the pins (see
Figure 8
).
[3]
V
gpd
represents the ground potential difference voltage. This is the voltage that results from current flowing through the finite resistance
and the inductance between the receiver and the driver circuit ground voltages.
[4]
IMD3 rejection with
6 dBFS/tone.
SFDR
RBW
restricted bandwidth
spurious-free dynamic
range
f
o
= 153.6 MHz; 0 dBFS; f
data
= 184.32 MHz; f
s
= 737.28 Msps
B = 20 MHz
C
B = 100 MHz
C
B = 20 MHz; 8-tone;
500 kHz spacing
-
-
-
86
80.5
76
-
-
-
dBc
dBc
dBc
C
IMD3
third-order
intermodulation
distortion
f
data
= 184.32 MHz; f
s
= 737.28 Msps
f
o1
= 95 MHz;
f
o2
= 97 MHz
f
o1
= 137 MHz;
f
o2
= 143 MHz
f
o1
= 152.5 MHz;
f
o2
= 153.5 MHz
C
[4]
-
77
-
dBc
C
[4]
-
74
-
dBc
I
[4]
-
74
-
dBc
ACPR
adjacent channel
power ratio
f
data
= 184.32 MHz; f
s
= 737.28 Msps; f
o
= 96 MHz
1-carrier; B = 5 MHz
I
-
68
-
dBc
2-carrier; B = 10 MHz C
4-carrier; B = 20 MHz C
f
data
= 184.32 MHz; f
s
= 737.28 Msps; f
o
= 153.6 MHz
1-carrier; B = 5 MHz
C
2-carrier; B = 10 MHz C
4-carrier; B = 20 MHz C
-
-
65
61
-
-
dBc
dBc
-
-
-
66
64
60.5
-
-
-
dBc
dBc
dBc
NSD
noise spectral density
f
data
= 184.32 MHz; f
s
= 737.28 Msps
f
o
= 19 MHz; 0 dBFS
f
o
= 153.6 MHz;
0 dBFS;
f
o
= 153.6 MHz;
10 dBFS
C
C
-
-
145
148
-
-
dBFS/Hz
dBFS/Hz
C
-
155
-
dBFS/Hz
Table 5.
V
DDA(1V8)
= V
DDD(1V8)
= 1.8 V; V
DDA(3V3)
= V
DD(IO)(3V3)
= 3.3 V; AGND, DGND and GNDIO shorted together;
T
amb
=
40
C to +85
C; typical values measured at T
amb
= 25
C; R
L
= 50
differential; I
O(fs)
= 20 mA; PLL off unless
otherwise specified.
Symbol
Parameter
Conditions
Characteristics
…continued
Test
[1]
Min
Typ
Max
Unit
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