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參數(shù)資料
| 型號： | CXK79M36C165GB |
| 英文描述： | MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| 中文描述： | 內(nèi)存SigmaRAM 16Meg 1x1z的LVCMOS的I / O（為512k × 36）（27頁364K牧師7/6/01） |
| 文件頁數(shù)： | 12/30頁 |
| 文件大?。?/td> | 554K |
| 代理商： | CXK79M36C165GB |
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SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
12 / 30
July 19, 2002
DC Electrical Characteristics
(V
DD
= 1.8V
±
0.1V, V
SS
= 0V, T
A
= 0 to 85
o
C)
1. For maximum output drive (i.e. minimum impedance), the ZQ pin can be tied directly to V
SS
.
2. For minimum output drive (i.e. minimum impedance), the ZQ pin can be left unconnected or tied directly to V
DDQ
.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Notes
Input Leakage Current
(Address, Control, Clock)
I
LI
V
IN
= V
SS
to V
DDQ
-5
---
5
uA
Input Leakage Current
(EP2, EP3)
I
MLI1
V
MIN
= V
SS
to V
DD
-10
---
10
uA
Input Leakage Current
(MCH)
I
MLI2
V
MIN
= V
MIH
(min) to V
DD
-10
---
10
uA
Input Leakage Current
(MCL)
I
MLI3
V
MIN
= V
SS
to V
MIL
(min)
-10
---
10
uA
Output Leakage Current
I
LO
V
OUT
= V
SS
to V
DDQ
-10
---
10
uA
Average Power Supply
Operating Current (x72)
I
DD-33
I
DD-4
I
DD-5
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
---
---
---
---
---
---
750
650
550
mA
Average Power Supply
Operating Current (x36)
I
DD-33
I
DD-4
I
DD-5
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
---
---
---
---
---
---
580
500
420
mA
Average Power Supply
Operating Current (x18)
I
DD-33
I
DD-4
I
DD-5
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
---
---
---
---
---
---
490
430
380
mA
Power Supply Deselect
Operating Current
I
DD2
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
---
---
250
mA
Output High Voltage
V
OH
I
OH
= -7.0 mA
RQ = 250
V
DDQ
- 0.4
---
---
V
Output Low Voltage
V
OL
I
OL
= 7.0 mA
RQ = 250
---
---
0.4
V
Output Driver Impedance
R
OUT
V
OH
, V
OL
= V
DDQ
/2
RQ
<
150
---
---
35
(30*1.15)
1
V
OH
, V
OL
= V
DDQ
/2
150
≤
RQ
≤
300
(RQ/5)*
0.85
RQ/5
(RQ/5)*
1.15
V
OH
, V
OL
= V
DDQ
/2
RQ
>
300
51
(60*0.85)
---
---
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK79M72C160GB | MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C161GB | MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C164GB | MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01) |
| CXK79M72C165GB | MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXO-M10 | Telecommunication IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK79M72C160GB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C161GB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C164GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36) |
| CXK79M72C165GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36) |
| CXK79M72C165GB-4 | 制造商:SONY 功能描述: |
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