參數(shù)資料
型號(hào): CXK79M36C164GB
英文描述: MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg 1x1z HSTL的I / O(為512k × 36)(27頁368K牧師7/6/01)
文件頁數(shù): 8/30頁
文件大?。?/td> 554K
代理商: CXK79M36C164GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
8 / 30
July 19, 2002
State Diagram
Notes
:
1. The notation “X,X,X,X” controlling the state transitions above indicate the states of inputs E1, E, ADV, and W respectively.
2. “1” = input “high”; “0” = input “l(fā)ow”; “X” = input “don’t care”; “T” = input “true”; “F” = input “false”.
3. If E2 = EP2 and E3 = EP3 then E = “T” else E = “F”.
Deselect
Bank
Deselect
Read
Read
Continue
Write
Write
Continue
X,F,0,X or X,X,1,X
X,F,0,X
1,T,0,X
X,F,0,X
1,T,0,X
1,T,0,X
X,F,0,X
1,T,0,X
1,T,0,X or X,X,1,X
0,T,0,0
0,T,0,1
0,T,0,0
0,T,0,1
X,F,0,X
X,F,0,X
0,T,0,0
0,T,0,1
X,X,1,X
X,X,1,X
0,T,0,0
0,T,0,1
1,T,0,X
0,T,0,0 0,T,0,1
X,X,1,X
X,X,1,X
0,T,0,1
0,T,0,0
相關(guān)PDF資料
PDF描述
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01)
CXK79M72C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C164GB-28 制造商:SONY 功能描述:
CXK79M36C165GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C160GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)