參數(shù)資料
型號(hào): CXK79M36C164GB
英文描述: MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg 1x1z HSTL的I / O(為512k × 36)(27頁(yè)368K牧師7/6/01)
文件頁(yè)數(shù): 25/30頁(yè)
文件大?。?/td> 554K
代理商: CXK79M36C164GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
25 / 30
July 19, 2002
.
Note 1
: NC and MCL pins at pad locations 5C, 5U, 7U, 6D, 6K, 6P, and 6T are connected to V
SS
internally, regardless of
pin connection externally.
Note 2
: MCH pin at pad location 6N is connected to V
DD
internally, regardless of pin connection externally.
512Kb x 36
Bit
Signal
NC
(1)
NC
(1)
NC
(1)
MCL
(1)
MCL
(1)
MCL
(1)
MCL
(1)
MCH
(2)
MCH
MCH
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
CQ1
CQ1
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
Ba
Bb
EP3
EP2
A
Pad
Bit
Signal
Pad
Bit
Signal
Pad
1
2
3
4
5
6
7
8
9
5C
5U
7U
6D
6K
6P
6T
6N
6M
6L
10R
11P
10P
11N
10N
11M
10M
11L
10L
11K
10K
11E
10D
11D
10C
11C
10B
11B
11A
10A
9C
8B
6H
6G
9A
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
E3
A
A
W
ADV
E1
A
A
E2
A
ZQ
Bd
Bc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
CQ2
CK
CK
CQ2
DQd
DQd
DQd
DQd
DQd
DQd
DQd
DQd
DQd
8A
7B
7A
6B
6A
6C
5A
5B
4A
3A
6F
4C
3B
2E
1F
2F
1G
2G
1H
2H
1J
2J
1K
3K
4K
2K
1R
2T
1T
2U
1U
2V
1V
1W
2W
71
72
73
74
75
76
77
78
79
80
81
82
83
84
MCL
A
A
A
A
A
A
A0
A1
A
A
A
A
A
6J
3V
4V
4U
5V
6U
5W
6W
6V
7V
8V
7W
8U
9V
10
11
12
13
14
15
16
17
18
19
20
21
22
22
24
25
26
27
28
29
30
31
32
33
34
35
相關(guān)PDF資料
PDF描述
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01)
CXK79M72C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C164GB-28 制造商:SONY 功能描述:
CXK79M36C165GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C160GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)