參數(shù)資料
型號: CXK79M36C163GB
英文描述: MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg入球LVCMOX的I / O(為512k × 36)(25頁兩臺360K牧師7/6/01)
文件頁數(shù): 28/30頁
文件大小: 554K
代理商: CXK79M36C163GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
28 / 30
July 19, 2002
(11x19) 209 Pin BGA Package Dimensions
SONY CODE
JEITA CODE
JEDEC CODE
BGA-209P-01
P-BGA209-14X22-1.0
PACKAGE MATERIAL
TERMINAL TREATMENT
TERMINAL MATERIAL
PACKAGE MASS
EPOXY RESIN
COPPER-CLAD LAMINATE
SOLDER
1.1g
PACKAGE STRUCTURE
2.0
0.30
S
A
0.20
0
S
B
S
0.15
S
B
A
0.10
S
AB
M
0.35
S
209PIN BGA (PLASTIC)
DETAIL
X
4C17
3C10
C15
1 2 3 4 5 6 7
B
A
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
x4
8 9
2.0 ± 0.3
209 -
φ
0.6 ± 0.1
2
14.0
2
13.0
0.5 ± 0.1
2
X
PIN 1 INDEX
1.0
1
10
11
V
W
PRELIMINARY
相關(guān)PDF資料
PDF描述
CXK79M36C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C164GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M36C164GB-28 制造商:SONY 功能描述:
CXK79M36C165GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C160GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)