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參數(shù)資料
| 型號： | CXK79M36C163GB |
| 英文描述： | MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01) |
| 中文描述： | 內(nèi)存SigmaRAM 16Meg入球LVCMOX的I / O（為512k × 36）（25頁兩臺360K牧師7/6/01） |
| 文件頁數(shù)： | 10/30頁 |
| 文件大?。?/td> | 554K |
| 代理商： | CXK79M36C163GB |
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SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
10 / 30
July 19, 2002
Absolute Maximum Ratings
Note
: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions other than those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
BGA Package Thermal Characteristics
I/O Capacitance
(T
A
= 25
o
C, f = 1 MHz)
Note
: These parameters are sampled and are not 100% tested.
Parameter
Symbol
Rating
Units
Supply Voltage
V
DD
-0.5 to +2.5
V
Output Supply Voltage
V
DDQ
-0.5 to +2.3
V
Input Voltage (Address, Control, Data, Clock)
V
IN
-0.5 to V
DDQ
+0.5 (2.3V max)
V
Input Voltage (EP2, EP3, MCL, MCH)
V
MIN
-0.5 to V
DD
+0.5 (2.5V max)
V
Input Voltage (TCK, TMS, TDI)
V
TIN
-0.5 to V
DD
+0.5 (2.5V max)
V
Operating Temperature
T
A
0 to 85
°
C
Junction Temperature
T
J
0 to 110
°
C
Storage Temperature
T
STG
-55 to 150
°
C
Parameter
Symbol
Rating
Units
Junction to Case Temperature
Θ
JC
3.6
°
C/W
Parameter
Symbol
Test conditions
Min
Max
Units
Input Capacitance
Address
C
IN
V
IN
= 0V
---
3.5
pF
Control
C
IN
V
IN
= 0V
---
3.5
pF
CK Clock
C
KIN
V
KIN
= 0V
---
4.0
pF
Output Capacitance
Data
C
OUT
V
OUT
= 0V
---
4.5
pF
CQ Clock
C
OUT
V
OUT
= 0V
---
4.5
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK79M36C164GB | MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01) |
| CXK79M36C165GB | MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C160GB | MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C161GB | MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C164GB | MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK79M36C164GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36) |
| CXK79M36C164GB-28 | 制造商:SONY 功能描述: |
| CXK79M36C165GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36) |
| CXK79M72C160GB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C161GB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
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