參數(shù)資料
型號(hào): CXK79M36C163GB
英文描述: MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg入球LVCMOX的I / O(為512k × 36)(25頁兩臺(tái)360K牧師7/6/01)
文件頁數(shù): 20/30頁
文件大?。?/td> 554K
代理商: CXK79M36C163GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
20 / 30
July 19, 2002
JTAG AC Electrical Characteristics
JTAG Timing Diagram
Parameter
Symbol
Min
Max
Units
TCK Cycle Time
t
THTH
50
ns
TCK High Pulse Width
t
THTL
20
ns
TCK Low Pulse Width
t
TLTH
20
ns
TMS Setup Time
t
MVTH
5
ns
TMS Hold Time
t
THMX
5
ns
TDI Setup Time
t
DVTH
5
ns
TDI Hold Time
t
THDX
5
ns
Capture Setup Time (Address, Control, Data, Clock)
t
CS
5
ns
Capture Hold Time (Address, Control, Data, Clock)
t
CH
5
ns
TCK Low to TDO Valid
t
TLQV
10
ns
TCK Low to TDO Hold
t
TLQX
0
ns
Figure 5
t
THTL
t
TLTH
t
THTH
t
THMX
t
MVTH
t
THDX
t
DVTH
t
TLQV
t
TLQX
TCK
TMS
TDI
TDO
相關(guān)PDF資料
PDF描述
CXK79M36C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01)
CXK79M36C165GB MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01)
CXK79M72C160GB MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C164GB MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (256K x 72) (27 pages 368K Rev. 7/6/01)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CXK79M36C164GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M36C164GB-28 制造商:SONY 功能描述:
CXK79M36C165GB 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M72C160GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
CXK79M72C161GB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)