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參數(shù)資料
| 型號： | CXK79M36C161GB |
| 英文描述： | MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| 中文描述： | 內存SigmaRAM 16Meg 1x1的LVCMOS的I / O（為512k × 36）（27頁364K牧師7/6/01） |
| 文件頁數(shù)： | 17/30頁 |
| 文件大?。?/td> | 554K |
| 代理商： | CXK79M36C161GB |
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SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
17 / 30
July 19, 2002
One Bank Read-Write-Read Timing Diagram
Note
:
In the diagram above, two Deselect operations are inserted between Read and Write operations to control the data bus transition
from output to input. This depiction is for clarity purposes only. It is NOT a requirement. Depending on the application, one Deselect op-
eration may be sufficient.
Note
: E1 = EP1 and E2 = EP2 in this example (not shown).
A2
A3
A4
A5
A
E1
DQ
Q11
D32
D41
Q12
Q21
t
KHAX
t
AVKH
t
KHBX
t
BVKH
D31
t
KHDX
t
DVKH
A1
Q51
Read
Read
Continue
Read
Deselect
Deselect
Write
Write
Continue
Write
Read
Deselect
Deselect
(Continue)
Figure 3
CK
CQ
CQ
ADV
W
t
KHCH
t
CHCL
t
CLCH
t
KHKH
t
KHKL
t
KLKH
Bx
t
KHQX1
t
KHQZ
t
KHQV
t
KHQX
t
CHQX
t
CHQV
CK
相關PDF資料 |
PDF描述 |
|---|---|
| CXK79M36C163GB | MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01) |
| CXK79M36C164GB | MEMORY-SigmaRAM 16Meg 1x1z HSTL I/O (512K x 36) (27 pages 368K Rev. 7/6/01) |
| CXK79M36C165GB | MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (512K x 36) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C160GB | MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
| CXK79M72C161GB | MEMORY-SigmaRAM 16Meg 1x1 LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK79M36C162GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-33 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-4 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C162GB-5 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) |
| CXK79M36C163GB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01) |
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