參數(shù)資料
型號(hào)： CS51313GDR16
廠商： ZF Electronics Corporation
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： Micropower 5V, 100mA Low Dropout Linear Regulator
中文描述： 微5V的，100mA的低壓差線性穩(wěn)壓器
文件頁(yè)數(shù)： 15/20頁(yè)
文件大?。?/td> 248K
代理商： CS51313GDR16
where
I
RMS(H)
= maximum switching MOSFET RMS current;
I
L(PEAK)
= inductor peak current;
I
L(VALLEY)
= inductor valley current;
D = Duty Cycle.
Once the RMS current through the switch is known, the
switching MOSFET conduction losses can be calculated:
P
RMS(H)
= I
RMS(H)2
×
R
DS(ON)
where
P
RMS(H)
= switching MOSFET conduction losses;
I
RMS(H)
= maximum switching MOSFET RMS current;
R
DS(ON)
= FET drain-to-source on-resistance
The upper MOSFET switching losses are caused during
MOSFET switch-on and switch-off and can be determined
by using the following formula:
P
SWH
= P
SWH(ON)
+ P
SWH(OFF)
=
,
where
P
SWH(ON)
= upper MOSFET switch-on losses;
P
SWH(OFF)
= upper MOSFET switch-off losses;
V
IN
= input voltage;
I
OUT
= load current;
t
RISE
= MOSFET rise time (from FET manufacturer’s
switching characteristics performance curve);
t
FALL
= MOSFET fall time (from FET manufacturer’s
switching characteristics performance curve);
T = 1/F
SW
= period.
The total power dissipation in the switching MOSFET can
then be calculated as:
P
HFET(TOTAL)
= P
RMSH
+ P
SWH(ON)
+ P
SWH(OFF)
,
where
P
HFET(TOTAL)
= total switching (upper) MOSFET losses;
P
RMSH
= upper MOSFET switch conduction Losses;
P
SWH(ON)
= upper MOSFET switch-on losses;
P
SWH(OFF)
= upper MOSFET switch-off losses.
Once the total power dissipation in the switching FET is
known, the maximum FET switch junction temperature
can be calculated:
T
J
= T
A
+ [P
HFET(TOTAL)
×
R
θ
JA
],
where
T
J
= FET junction temperature;
T
A
= ambient temperature;
P
HFET(TOTAL)
= total switching (upper) FET losses;
R
θ
JA
= upper FET junction-to-ambient thermal resistance
Step 7b: Selection of the synchronous (lower) FET
The switch conduction losses for the lower FET can be cal-
culated as follows:
P
RMSL
= I
RMS2
×
R
DS(ON)
= [I
OUT
×
(1
D)]
2
×
R
DS(ON)
,
where
P
RMSL
= lower MOSFET conduction losses;
I
OUT
= load current;
D = Duty Cycle;
R
DS(ON)
= lower FET drain-to-source on-resistance.
The synchronous MOSFET has no switching losses, except
for losses in the internal body diode, because it turns on
into near zero voltage conditions. The MOSFET body
diode will conduct during the non-overlap time and the
resulting power dissipation (neglecting reverse recovery
losses) can be calculated as follows:
P
SWL
= V
SD
×
I
LOAD
×
non-overlap time
×
F
SW
,
where
P
SWL
= lower FET switching losses;
V
SD
= lower FET source-to-drain voltage;
I
LOAD
= load current
Non-overlap time = GATE(L)-to-GATE(H) or GATE(H)-
to-GATE(L) delay (from CS51313 data sheet Electrical
Characteristics section);
F
SW
= switching frequency.
The total power dissipation in the synchronous (lower)
MOSFET can then be calculated as:
P
LFET(TOTAL)
= P
RMSL
+ P
SWL
,
where
P
LFET(TOTAL)
= Synchronous (lower) FET total losses;
P
RMSL
= Switch Conduction Losses;
P
SWL
= Switching losses.
Once the total power dissipation in the synchronous FET is
known the maximum FET switch junction temperature can
be calculated:
T
J
= T
A
+ [P
LFET(TOTAL)
×
R
θ
JA
],
where
T
J
= MOSFET junction temperature;
T
A
= ambient temperature;
P
LFET(TOTAL)
= total synchronous (lower) FET losses;
R
θ
JA
= lower FET junction-to-ambient thermal resistance.
Step 8: Control IC Power Dissipation
The power dissipation of the IC varies with the MOSFETs
used, V
CC
, and the CS51313 operating frequency. The aver-
age MOSFET gate charge current typically dominates the
control IC power dissipation.
The IC power dissipation is determined by the formula:
P
CONTROLIC
= I
CC
V
CC
+ P
GATE(H)
+ P
GATE(L)
,
where
P
CONTROLIC
= control IC power dissipation;
I
CC
= IC quiescent supply current;
V
CC
= IC supply voltage;
P
GATE(H)
= upper MOSFET gate driver (IC) losses;
P
GATE(L)
= lower MOSFET gate driver (IC) losses.
The upper (switching) MOSFET gate driver (IC) losses are:
P
GATE(H)
= Q
GATE(H)
×
F
SW
×
V
GATE(H)
,
V
IN
×
I
OUT
×
(t
RISE
+ t
FALL
)
6T
Application Information: continued
C
15
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