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參數(shù)資料
| 型號(hào)： | CRS12_06 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| 中文描述： | 開關(guān)電源的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 154K |
| 代理商： | CRS12_06 |
CRS12
2006-11-13
1
TOSHIBA Schottky Barrier Diode
CRS12
Switching Mode Power Supply Applications
(Output voltage:
≤
12 V)
DC/DC Converter Applications
Forward voltage: V
FM
= 0.58 V (max)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 60 V
Suitable for compact assembly due to small surface-mount package
“S
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
60
V
Average forward current
1.0 (Note 1)
A
Non-repetitive peak surge current
20 (50 Hz)
40~150
40~150
A
Junction temperature
°C
Storage temperature range
°C
Note 1: Ta
=
73°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering size: 2 mm
×
2 mm
Board thickness: 0.64 t
Rectangular waveform (
α
=
180°), V
R
=
30 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
V
FM (2)
I
RRM (1)
I
RRM (2)
C
j
I
FM
=
0.7 A (pulse test)
I
FM
=
1.0 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
60 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
0.48
Peak forward voltage
0.52
0.58
V
0.4
Peak repetitive reverse current
4.0
100
μ
A
Junction capacitance
40
pF
70
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
140
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 1.2 mm
×
1.2 mm)
(board thickness: 1.6 t)
240
°C/W
Thermal resistance
(junction to lead)
R
th (j-
)
20
°C/W
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
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