參數(shù)資料
型號(hào): CRF24010D
廠商: Cree, Inc.
英文描述: 10 W SiC RF Power MESFET Die
中文描述: 10瓦SiC射頻功率MESFET模具
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 738K
代理商: CRF24010D
CRF2400D Rev .5, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
DIE Dimensions (units in microns)
Overall die size 1143 x 1067 (+/-25) microns, die thickness 300 microns
All pads must be bonded for electrical connection (sources not connected to backside metal).
Assembly Notes:
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/wireless.
Vacuum collet is the preferred method of pick-up.
Die back side gold plating is 5 microns thick minimum.
Use caution to prevent air bridge damage.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
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