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參數(shù)資料
| 型號： | CRF24010D |
| 廠商： | Cree, Inc. |
| 英文描述： | 10 W SiC RF Power MESFET Die |
| 中文描述： | 10瓦SiC射頻功率MESFET模具 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 738K |
| 代理商： | CRF24010D |
2
CRF2400D Rev .5, Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2002-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous) at 25C
Parameter
Symbol
Rating
Units
Drain-source Voltage
V
DSS
V
GS
T
STG
T
J
R
θ
JC
T
S
120
VDC
Gate-source Voltage
-20, +3
VDC
Storage Temperature
-55, 150
C
Operating Junction Temperature
255
C
Thermal Resistance, Junction to Case
1
5.6
C/W
Mounting Temperature (30 seconds)
320
C
1
Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier.
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
V
GS(th)
-12
-10
–
VDC
V
DS
= 10 V, I
D
= 0.5 mA
Gate Quiescent Voltage
V
GS(Q)
–
-9
–
VDC
V
DS
= 48 V, I
D
= 250 mA
Zero Gate Voltage Drain Current
I
DSS
1.2
1.5
1.8
A
V
DS
= 10 V, V
GS
= 0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
100
–
–
VDC
V
GS
= -18 V, I
D
= 10 mA
Forward Transconductance
g
m
140
160
–
mS
V
DS
= 48 V, I
D
= 250 mA
RF Characteristics
Gain
G
SS
13
15
–
dB
V
DD
= 48 V, I
DQ
= 500 mA, f = 2000 MHz
Power Output at 1 dB Compression
P
1dB
10
12
–
W
V
DD
= 48 V, I
DQ
= 500 mA, f = 2000 MHz
Drain Efficiency
1,2
η
40
45
–
%
V
DD
= 48 V, I
DQ
= 250 mA, f = 2000 MHz
P
OUT
= P
1dB
V
= 48 V, I
= 250 mA
f1 = 2000.0 MHz, f2 = 2000.1 MHz
P
OUT
= 10 W PEP
Intermodulation Distortion
IMD
3
–
-31
–
dBc
Minimum Noise Figure
NF
min
–
3.1
–
dB
V
DD
= 48 V, I
DQ
= 500 mA, f = 2000 MHz
Output Mismatch Stress
VSWR
10:1
–
–
–
No damage at all phase angles
V
DD
= 48 V, I
= 500 mA, f = 2000 MHz
P
OUT
= 10 W CW
Dynamic Characteristics
Input Capacitance
C
ISS
–
1.9
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Output Capacitance
C
OSS
–
1.3
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Reverse Transfer Capacitance
C
RSS
–
0.44
–
pF
V
DS
= 48 V, V
gs
= -16 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
/P
2
Power Added Efficiency (PAE) = (P
OUT
-P
IN
)P
DC
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