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參數資料
| 型號： | CPV364M4UPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 10 Amp |
| 文件頁數： | 6/11頁 |
| 文件大?。?/td> | 240K |
| 代理商： | CPV364M4UPBF |
CPV364M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
4
Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
20
f, Frequency (KHz)
L
O
AD
CURRENT
(A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.59
1.17
1.76
Total
Output
Power
(kW)
3.51
5.85
2.34
2.93
4.10
4.68
5.27
1
10
100
0
1
.
0
CE
C
I
,
C
o
llector-to-Em
itter
C
u
rrent
(A)
V
, Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
V
= 15V
20s PULSE WIDTH
GE
1
10
100
56
7
8
9
CI
,
C
o
llector-to-Em
itter
C
u
rrent
(A)
GE
T = 25°C
T = 150°C
J
V
, Gate-to-Emitter Voltage (V)
V
= 10V
5s PULSE WIDTH
CC
25
50
75
100
125
150
0
4
8
12
16
20
T , Case Temperature (
C)
M
a
x
im
u
m
D
C
o
lle
c
to
rC
u
rre
n
t(A
)
C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
1.2
1.4
1.6
1.8
2.0
T , Junction Temperature ( C)
V
,
C
o
lle
c
to
r-to
-E
mitte
rV
o
lta
g
e
(V
)
J
°
CE
V
= 15V
80 us PULSE WIDTH
GE
I =
A
5
C
I =
A
10
C
I =
A
20
C
5.0
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