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參數(shù)資料
| 型號： | CPV364M4UPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 10 Amp |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 240K |
| 代理商： | CPV364M4UPBF |
CPV364M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
2
Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse width
80 μs, duty factor 0.1 %
(2) Pulse width 5.0 μs; single shot
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case, each IGBT, one IGBT in conduction
RthJC (IGBT)
-
2.0
°C/W
Junction to case, each DIODE, one DIODE in conduction
RthJC (DIODE)
-
3.0
Case to sink, flat, greased surface
RthCS (MODULE)
0.10
-
Weight of module
20
-
g
0.7
-
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V(BR)CES (1)
VGE = 0 V, IC = 250 μA
600
-
V
Temperature coefficient of
breakdown voltage
V
(BR)CESTJ
VGE = 0 V, IC = 1.0 mA
-
0.63
-
V/°C
Collector to emitter saturation voltage
VCE(on)
IC = 10 A
VGE = 15 V
See fig. 2, 5
-
1.56
2.1
V
IC = 20 A
-
1.84
-
IC = 10 A, TJ = 150 °C
-
1.56
-
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
3.0
-
6.0
Temperature coefficient of
threshold voltage
V
GE(th)/TJ
VCE = VGE, IC = 250 μA
-
- 13
-
mV/°C
Forward transconductance
gfe (2)
VCE = 100 V, IC = 10 A
11
18
-
S
Zero gate voltage collector current
ICES
VGE = 0 V, VCE = 600 V
-
250
μA
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
3500
Diode forward voltage drop
VFM
IC = 15 A
See fig. 13
-1.3
1.7
V
IC = 15 A, TJ = 150 °C
-
1.2
1.6
Gate to emitter leakage current
IGES
VGE = ± 20 V
-
± 100
nA
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