參數(shù)資料
型號(hào)： CPV364M4UPBF
廠商： VISHAY SEMICONDUCTORS
元件分類： 電源模塊
英文描述： Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2
中文描述： IGBT Transistors 600 Volt 10 Amp
文件頁(yè)數(shù)： 5/11頁(yè)
文件大小： 240K
代理商： CPV364M4UPBF
CPV364M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
3
Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 10 A
VCC = 400 V
VGE = 15 V
See fig. 8
-
100
160
nC
Gate to emitter charge (turn-on)
Qge
-16
24
Gate to collector charge (turn-on)
Qgc
-40
55
Turn-on delay time
td(on)
TJ = 25 °C
IC = 10 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-41-
ns
Rise time
tr
-13-
Turn-off delay time
td(off)
-
96
140
Fall time
tf
-
110
160
Turn-on switching loss
Eon
-0.26
-
mJ
Turn-off switching loss
Eoff
-0.18
-
Total switching loss
Ets
-
0.44
0.7
Turn-on delay time
td(on)
TJ = 150 °C
IC = 10 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-39-
ns
Rise time
tr
-15-
Turn-off delay time
td(off)
-
220
-
Fall time
tf
-
160
-
Total switching loss
Ets
-0.74
-
mJ
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
= 1.0 MHz
See fig. 7
-
2100
-
pF
Output capacitance
Coes
-
110
-
Reverse transfer capacitance
Cres
-34-
Diode reverse recovery time
trr
TJ = 25 °C
See fig. 14
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
-42
60
ns
TJ = 125 °C
-
74
120
Diode peak reverse recovery charge
Irr
TJ = 25 °C
See fig. 15
-4.0
6.0
A
TJ = 125 °C
-
6.5
10
Diode reverse recovery charge
Qrr
TJ = 25 °C
See fig. 16
-
80
180
nC
TJ = 125 °C
-
220
600
Diode peak rate of fall of
recovery during tb
dI(rec)M/dt
TJ = 25 °C
See fig. 17
-
188
-
A/μs
TJ = 125 °C
-
160
-
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