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參數(shù)資料
| 型號： | CPV364M4KPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 13 Amp |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 233K |
| 代理商： | CPV364M4KPBF |
CPV364M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
4
Document Number: 94488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
f, Frequency (KHz)
L
O
AD
CURRENT
(A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.59
1.17
1.76
Total
Output
Power
(kW)
3.51
5.27
2.34
2.93
4.10
4.68
1
10
100
1
10
V
, Collector-to-Emitter Voltage (V)
I
,
C
o
lle
c
to
r-to
-E
mitte
rC
u
rre
n
t(A
)
CE
C
V
= 15V
20s PULSE WIDTH
GE
T = 25 C
J
°
T = 150 C
J
°
1
10
100
5
6
7
8
9
10
V
, Gate-to-Emitter Voltage (V)
I
,
C
o
lle
c
to
r-to
-E
m
itte
rC
u
rre
n
t(A
)
GE
C
V
= 50V
5s PULSE WIDTH
CC
T = 25 C
J
°
T = 150 C
J
°
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
160
DC
Square wave (D=0.50)
80% rated Vr applied
see note (2)
TC, Case Temperature (°C)
Maximum
DC
Collector
Current
(A)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
V
,
C
o
lle
c
to
r-to
-E
m
itte
rV
o
lta
g
e
(V
)
J
°
CE
V
= 15V
80 us PULSE WIDTH
GE
I =
A
26
C
I =
A
13
C
I =
A
6.5
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPV364M4UPBF | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| CR02A-2240 | |
| CR02D-0148 | |
| CR02D-224 | |
| CR01D-0148 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPV364M4U | 功能描述:IGBT SIP MODULE 600V 10A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CPV364M4UPBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 20A 600V IMS-2 |
| CPV364MF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT |
| CPV364MK | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
| CPV364MM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Short Circuit Rated Fast IGBT |
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