參數(shù)資料
型號： CPV364M4KPBF
廠商： VISHAY SEMICONDUCTORS
元件分類： 電源模塊
英文描述： Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2
中文描述： IGBT Transistors 600 Volt 13 Amp
文件頁數(shù)： 5/11頁
文件大?。?/td> 233K
代理商： CPV364M4KPBF
CPV364M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
3
Document Number: 94488
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 13 A
VCC = 400 V
VGE = 15 V
See fig. 8
-
110
170
nC
Gate to emitter charge (turn-on)
Qge
-14
21
Gate to collector charge (turn-on)
Qgc
-49
74
Turn-on delay time
td(on)
TJ = 25 °C
IC = 13 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
-50-
ns
Rise time
tr
-30-
Turn-off delay time
td(off)
-
110
170
Fall time
tf
-
91
140
Turn-on switching loss
Eon
-0.56
-
mJ
Turn-off switching loss
Eoff
-0.28
-
Total switching loss
Ets
-
0.84
1.1
Short circuit withstand time
tsc
VCC = 360 V,TJ = 125 °C
VGE = 15 V, RG = 10 , VCPK < 500 V
10
-
μs
Turn-on delay time
td(on)
TJ = 150 °C, see fig. 9, 10, 11, 18
IC = 13 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and
diode reverse recovery
-47-
ns
Rise time
tr
-30-
Turn-off delay time
td(off)
-
250
-
Fall time
tf
-
150
-
Total switching loss
Ets
-1.28
-
mJ
Internal emitter inductance
LE
Measured 5 mm from package
-
7.5
-
nH
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
= 1.0 MHz
See fig. 7
-
1600
-
pF
Output capacitance
Coes
-
130
-
Reverse transfer capacitance
Cres
-55-
Diode reverse recovery time
trr
TJ = 25 °C
See fig. 14
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
-42
60
ns
TJ = 125 °C
-
74
120
Diode peak reverse recovery charge
Irr
TJ = 25 °C
See fig. 15
-4.0
6.0
A
TJ = 125 °C
-
6.5
10
Diode reverse recovery charge
Qrr
TJ = 25 °C
See fig. 16
-
80
180
nC
TJ = 125 °C
-
220
600
Diode peak rate of fall of recovery
during tb
dI(rec)M/dt
TJ = 25 °C
See fig. 17
-
188
-
A/μs
TJ = 125 °C
-
160
-
相關(guān)PDF資料
PDF描述
CPV364M4UPBF Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2
CR02A-2240
CR02D-0148
CR02D-224
CR01D-0148
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CPV364M4U 功能描述:IGBT SIP MODULE 600V 10A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
CPV364M4UPBF 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 20A 600V IMS-2
CPV364MF 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT
CPV364MK 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
CPV364MM 制造商:IRF 制造商全稱:International Rectifier 功能描述:Short Circuit Rated Fast IGBT
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