參數(shù)資料
型號(hào)： CPV363M4UPBF
廠商： VISHAY SEMICONDUCTORS
元件分類： 電源模塊
英文描述： Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2
中文描述： IGBT Transistors 600 Volt 6.8 Amp
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 239K
代理商： CPV363M4UPBF
CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
3
Document Number: 94486
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 6.8 A
VCC = 400 V
See fig. 8
-53
79
nC
Gate to emitter charge (turn-on)
Qge
-7.7
12
Gate to collector charge (turn-on)
Qgc
-21
31
Turn-on delay time
td(on)
TJ = 25 °C
IC = 6.8 A, VCC = 480 V
VGE = 15 V, RG = 23
Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18
-43
-
ns
Rise time
tr
-14
-
Turn-off delay time
td(off)
-
95
140
Fall time
tf
-
83
190
Turn-on switching loss
Eon
-0.17-
mJ
Turn-off switching loss
Eoff
-0.15-
Total switching loss
Ets
-
0.32
0.45
Turn-on delay time
td(on)
TJ = 150 °C
IC = 6.8 A, VCC = 480 V
VGE = 15 V, RG = 23
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-41
-
ns
Rise time
tr
-16
-
Turn-off delay time
td(off)
-110
-
Fall time
tf
-230
-
Total switching loss
Ets
-0.52-
mJ
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
= 1.0 MHz
See fig. 7
-
1100
-
pF
Output capacitance
Coes
-73
-
Reverse transfer capacitance
Cres
-14
-
Diode reverse recovery time
trr
TJ = 25 °C
See fig. 14
IF = 12 A
VR = 200 V
dI/dt = 200 A/μs
-42
60
ns
TJ = 125 °C
-
83
120
Diode peak reverse recovery charge
Irr
TJ = 25 °C
See fig. 15
-3.5
6.0
A
TJ = 125 °C
-
5.6
10
Diode reverse recovery charge
Qrr
TJ = 25 °C
See fig. 16
-
80
180
nC
TJ = 125 °C
-
220
600
Diode peak rate of fall of recovery
during tb
dI(rec)M/dt
TJ = 25 °C
See fig. 17
-180
-
A/μs
TJ = 125 °C
-
116
-
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