參數(shù)資料
型號: CM3121-02SH
廠商: California Micro Devices Corporation
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Dual Linear Voltage Regulator for DDR-I and DDR-II Memory
中文描述: 雙線性穩(wěn)壓器,用于DDR I和DDR - II內(nèi)存
文件頁數(shù): 3/11頁
文件大小: 219K
代理商: CM3121-02SH
2004 California Micro Devices Corp. All rights reserved.
11/12/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
3
CM3121
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
Note 1: The V
DDQ
regulator provides power for both the memory load and the V
TT
regulator, supplying a total of 1.5A to the V
DDQ
and V
TT
outputs. For example, if the V
DDQ
load current is 1.2A, then the maximum V
TT
load current will be 0.3A, regardless
of the actual V
TT
output current rating.
PART NUMBERING INFORMATION
Leads
Package
Standard Finish
Lead-free Finish
Ordering Part
Number
1
Part Marking
Ordering Part
Number
1
Part Marking
8
PSOP-8
CM3121-02SB
CM3121 02SB
CM3121-02SH
CM3121 02SH
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
±
2000
UNITS
ESD (Human Body Model)
V
Pin Voltages
V
CC
EN_DDR,
SENSE_V
DDQ
, SENSE_V
TT
Storage Temperature Range
[GND - 0.6] to [+6.5]
[GND - 0.6] to [V
CC
+ 0.6]
V
V
-40 to +150
°C
Operating Temperature Range
Ambient
Junction
-40 to +85
0 to +125
°C
°C
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Ambient Operating Temperature Range
-40 to +85
°C
1. V
DDQ
Regulator
DDR-I Supply Voltage V
CC
DDR-II Supply Voltage V
CC
Load Current (note 1)
[V
DDQ
+ 0.3] to 3.6
2.2 to 2.8
V
V
0 to 1500
mA
μ
F
C
CC
, C
DDQ
2. V
TT
Regulator
DDR-I Supply Voltage V
DDQ
DDR-II Supply Voltage V
DDQ
DDR-I Load Current
10, 10
2.3 to 2.8
V
1.7 to 1.9
V
0 to
±
500
0 to
±
300
47
mA
DDR-II Load Current
mA
C
TT
μ
F
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