參數(shù)資料
型號: CM20AD00-12H
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI IGBT MODULES
中文描述: 三菱IGBT模塊
文件頁數(shù): 4/4頁
文件大?。?/td> 79K
代理商: CM20AD00-12H
Sep. 2000
MITSUBISHI IGBT MODULES
CM20AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
I
DRM
I
RRM
I
TM
I
GT
V
GT
I
H
R
th(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
Critical rate of rise of off-state
Voltage
Holding current
Thermal resistance
THYRISTOR PART
dv/dt
V
D
=800V
V
R
=800V
I
T
=20A, instantaneous means
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
T
j
=125
°
C, V
D
=540V, exp. waveform
1
1
1.55
50
3
1.75
mA
mA
V
mA
V
mA
°
C/W
50
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
500
V/
μ
s
Resistance
Temperature coefficient
Measured between N-N1
m
%/
°
C
3.4
0.079
R
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
RESISTOR PART
Resistance
B Constant
T
C
= 25
°
C
Resistance at 25
°
C, 50
°
C
(Note.5)
k
K
100
4000
R
TH
B
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
THERMISTOR PART
Note.1 I
E
, V
EC
, t
rr
, Q
rr
, di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3 Junction temperature (T
j
) should not increase beyond 150
°
C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR
1
-InR
2
)/(1/T
1
-1/T
2
)
R
1
: Resistance at T
1
(K)
R
2
: Resistance at T
2
(K)
*
1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Contact thermal resistance
Case to fin, Thermal compound applied
*
1
(1 module)
°
C/W
0.05
R
th(c-f)
Symbol
Parameter
Test conditions
Unit
Typ.
Limits
Min.
Max.
COMMON RATING
相關(guān)PDF資料
PDF描述
CM20AD05-12H MITSUBISHI IGBT MODULES
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參數(shù)描述
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