參數(shù)資料
型號(hào)： CM20AD00-12H
廠商： Mitsubishi Electric Corporation
英文描述： MITSUBISHI IGBT MODULES
中文描述： 三菱IGBT模塊
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 79K
代理商： CM20AD00-12H
Sep. 2000
MITSUBISHI IGBT MODULES
CM20AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
T
C
= 25
°
C
PULSE
T
C
= 25
°
C
PULSE
T
C
= 25
°
C
(Note. 2)
(Note. 2)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note.1
)
I
EM (
Note.1
)
P
C (
Note.3
)
Parameter
Collector Current
Emitter Current
Conditions
Unit
V
V
A
A
A
A
W
Rating
600
±
20
20
40
20
40
62
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
600
±
20
20
40
59
600
20
G-E Short
C-E Short
T
C
= 25
°
C
PULSE
T
C
= 25
°
C
Clamp diode part
Clamp diode part
(Note. 2)
Symbol
V
CES
V
GES
I
C
I
CM
P
C (
Note.3
)
V
RRM
I
FM (
Note.3
)
Parameter
Collector Current
Conditions
Unit
V
V
A
A
W
V
A
Rating
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
800
220
20
200
165
3
φ
rectifying circuit
1/2 cycle at 60Hz, peak value, Non-repetitive
Value for one cycle of surge current
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Conditions
Unit
V
V
A
A
A
2
s
Rating
V
DRM
V
RRM
I
T(AV)
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
di/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge (non-repetitive)
on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate forward voltage
Peak gate reverse voltage
Critical rate of rise of on-state Current
Symbol
Parameter
Conditions
Unit
V
V
A
Rating
800
800
20
W
W
A
V
V
A/
μ
s
MAXIMUM RATINGS
(Tj = 25
°
C)
INVERTER PART
BRAKE PART
CONVERTER PART
THYRISTOR PART
T
j
T
j
T
stg
V
iso
—
—
Junction temperature
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
–40 ~ +150
–40 ~ +125
–40 ~ +125
2500
1.47 ~ 1.96
120
Inverter, brake, converter part
Thyristor part
AC 1 min.
Mounting M4 screw
Typical value
Symbol
Parameter
Conditions
Unit
°
C
°
C
°
C
V
N·m
g
Rating
COMMON RATING
I
TSM
Single-phase, half-wave 180
°
conduction
I
G
=100mA, V
D
=400V, dI
G
/dt=1A/
μ
s
10
1
3
10
5
100
1/2 cycle at 60Hz, peak value Non-repetitive
200
A
相關(guān)PDF資料
PDF描述
CM20AD05-12H MITSUBISHI IGBT MODULES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM20AD05-12H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI IGBT MODULES
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