參數(shù)資料
型號(hào)： CM200E3U-12H
廠商： POWEREX INC
元件分類(lèi)： IGBT 晶體管
英文描述： Chopper IGBTMOD 200 Amperes/600 Volts
中文描述： 200 A, 600 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 50K
代理商： CM200E3U-12H
Sep.1998
Thermal and Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
R
th(c-f)
Per IGBT
–
–
0.19
°C/W
Thermal Resistance, Junction to Case
Per FWDi
–
–
0.35
°C/W
Thermal Resistance, Junction to Case
Clamp Diode Part
–
–
0.35
°C/W
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.035
–
°C/W
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
C
,
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
100
0
V
GE
= 20V
15
13
12
11
8
T
j
= 25
o
C
300
400
500
10
9
14
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
C
,
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
300
100
0
200
400
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
C
S
C
,
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
0
100
200
300
400
4
3
2
1
0
500
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
S
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T
j
= 25°C
0
4
8
12
16
20
8
6
4
2
0
I
C
= 80A
I
C
= 400A
I
C
= 200A
0.6
1.0
1.4
1.8
2.6
2.2
3.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
E
E
,
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
i
,
o
,
r
,
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料
PDF描述
CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE
CM200HA-24H Single IGBTMOD 200 Amperes/1200 Volts
CM200TU-12F 240 x 128 pixel format, CFL Backlight with power harness
CM200TU-12F 240 x 128 pixel format, CFL Backlight with power harness
CM200TU-12H 240 x 128 pixel format, CFL Backlight with power harness
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CM200E3U-12H_09 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM200E3U-24F 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE
CM200E3Y12E 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C)
CM200E3Y24E 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)
CM200EXS-24S 制造商:Powerex Power Semiconductors 功能描述:IGBT 1200V 200A 1500W MODULE 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE 1.2KV 200A 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 200A 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:1.5kW; Operating Temperature Min:-40C; Operating Temperature Max:150C; No. of Pins:8 ;RoHS Compliant: Yes 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR
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