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參數(shù)資料
| 型號： | CM200E3U-12H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Chopper IGBTMOD 200 Amperes/600 Volts |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | CM200E3U-12H |
Sep.1998
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings
Symbol
CM200E3U-12H
Units
Junction Temperature
T
j
-40 to 150
°C
Storage Temperature
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
600
Volts
Gate-Emitter Voltage (C-E SHORT)
±20
Volts
Collector Current (T
c
= 25°C)
Peak Collector Current
200
Amperes
400*
200
Amperes
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Amperes
400*
Amperes
Maximum Collector Dissipation (T
c
= 25°C, T
j
150°C)
Mounting Torque, M5 Main Terminal
650
Watts
2.5~3.5
N · m
Mounting Torque, M6 Mounting
–
3.5~4.5
N · m
Weight
–
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
I
GES
V
GE(th)
V
CE(sat)
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 15V, T
j
= 25°C
I
C
= 200A, V
GE
= 15V, T
j
= 125°C
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
I
E
= 200A, V
GE
= 0V
I
F
= 200A, Clamp Diode Part
–
–
1
mA
Gate Leakage Voltage
–
–
0.5
μ
A
Volts
Gate-Emitter Threshold Voltage
4.5
6
7.5
Collector-Emitter Saturation Voltage
–
2.4
3.0
Volts
–
2.6
–
Volts
Total Gate Charge
Q
G
V
EC
V
FM
–
400
–
nC
Emitter-Collector Voltage**
–
–
2.6
Volts
Emitter-Collector Voltage
–
–
2.6
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
rr
Q
rr
–
–
17.6
nF
Output Capacitance
V
CE
= 10V, V
GE
= 0V
–
–
9.6
nF
Reverse Transfer Capacitance
–
–
2.6
nF
Resistive
Turn-on Delay Time
V
CC
= 300V, I
C
= 200A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1
, Resistive
Load Switching Operation
–
–
150
ns
Load
Rise Time
–
–
400
ns
Switch
Turn-off Delay Time
–
–
300
ns
Times
Fall Time
–
–
300
ns
Diode Reverse Recovery Time**
I
E
= 200A, di
E
/dt = -400A/
μ
s
I
E
= 200A, di
E
/dt = -400A/
μ
s
I
F
= 200A, Clamp Diode Part
di
F
/dt = -400A/
μ
s
–
–
160
ns
Diode Reverse Recovery Charge**
–
0.48
–
μ
C
ns
Diode Reverse Recovery Time
–
–
160
Diode Reverse Recovery Charge
–
0.48
–
μ
C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
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| CM200TU-12F | 240 x 128 pixel format, CFL Backlight with power harness |
| CM200TU-12H | 240 x 128 pixel format, CFL Backlight with power harness |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CM200E3U-12H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
| CM200E3U-24F | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM200E3Y12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C) |
| CM200E3Y24E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C) |
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