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參數(shù)資料
| 型號(hào)： | CM1200HB-66H |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 1200 A, 3300 V, N-CHANNEL IGBT |
| 封裝： | POWER MODULE-9 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | CM1200HB-66H |
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
I
C................................................................
1200A
G
V
CES .......................................................
3300V
G
Insulated Type
G
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1200HB-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
CIRCUIT DIAGRAM
E
C
E
E
C
C
E
G
C
LABEL
C
E
G
C
E
CM
E
E
C
C
2
5
13
61.5
61.5
1
1
0
4
79.4
20.25
41.25
57
±
0.25
171
190
5.2
40
15
57
±
0.25
57
±
0.25
3
2
2
3 - M4 NUTS
8 -
φ
7MOUNTING HOLES
6 - M8 NUTS
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
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| CM1200HC-50H | HIGH POWER SWITCHING USE INSULATED TYPE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM1200HB-66H_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-34H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-50H | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-50H_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-66H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
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