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參數(shù)資料
| 型號： | CM1200HA-24J |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts |
| 中文描述： | 1200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | POWER MODULE-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | CM1200HA-24J |
1
Single IGBTMOD
H-Series Module
1200 Amperes/1200 Volts
CM1200HA-24J
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.12
130.0
B
4.33
±
0.01
1.840
110.0
±
0.25
46.75
C
D
1.73
±
0.04/0.02 44.0
±
1.0/0.5
1.46
±
0.04/0.02 37.0
±
1.0/0.5
1.42
E
F
36.0
G
1.25
31.8
H
1.18
30.0
J
1.10
28.0
K
1.08
27.5
Description:
Powerex IGBTMOD Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200HA-24J is a 1200V
(V
CES
), 1
2
00 Ampere Single
IGBTMOD Power Module.
Type
Current Rating
Amperes
V
CES
Volts (x 50)
CM
1200
24
Dimensions
Inches
Millimeters
L
0.79
20.0
M
0.77
19.5
N
0.75
19.0
P
0.61
15.6
Q
0.51
13.0
R
0.35
9.0
S
M8 Metric
M8
T
0.26 Dia.
Dia. 6.5
U
M4 Metric
M4
D
E
E
C
E
G
H
K
R
A
B
B
A
N
F
L
M
C
J
G
P
Q
C
T - DIA.
(4 TYP.)
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
E
G
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM1200HA-34H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HB-66H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HC-50H | HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1400DU-24NF | Mega Power Dual⑩ IGBTMOD 1400 Amperes/1200 Volts |
| CM150DU-12F | Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM1200HA34H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.7KV V(BR)CES | 1.2KA I(C) |
| CM1200HA-34H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM1200HA50H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 2.5KV V(BR)CES | 1.2KA I(C) |
| CM1200HA-50H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| CM1200HA-66H | 制造商:Mitsubishi Electric 功能描述:POWER IGBT TRANSISTOR |
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