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參數(shù)資料
| 型號： | CJD3439 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS |
| 中文描述： | NPN硅塑料高壓功率晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 579K |
| 代理商： | CJD3439 |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS
CJD3439
DPAK (TO-252)
Plastic Package
Designed for use in Line Operated Equipment Requiring High f
T
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Total Power Dissipation at T
c
=25oC
Derate Above 25oC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
UNIT
V
V
V
A
mA
W
W/oC
T
j,
T
stg
oC
THERMAL CHARACTERISTICS
Junction to Case
R
th (j-c)
oC/W
ELECTRICAL CHARACTERISTICS (T
c
=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
V
CEO(sus)
I
CEO
I
CEX
I
CBO
I
EBO
h
FE
TEST CONDITION
I
C
=5mA, I
B
=0
V
CE
=300V, I
B
=0
V
CE
=450V, V
EB(off)
=1.5V
V
CB
=350V, I
E
=0
V
BE
=5V, I
C
=0
I
C
=2mA, V
CE
=10V
I
C
=20mA, V
CE
=10V
I
C
=50mA, I
B
=4mA
I
C
=50mA, I
B
=4mA
I
C
=50mA, V
CE
=10V
MIN
350
TYP
MAX
UNIT
V
μ
A
μ
A
μ
A
μ
A
20
500
20
20
30
15
200
0.5
1.3
0.8
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
V
CE (sat)
V
BE (sat)
V
BE (on)
V
V
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
SYMBOL
f
T
C
0b
h
fe
TEST CONDITION
I
C
=10mA, V
CE
=10V, f=5MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=5mA, V
CE
=10V, f=1KHz
MIN
15
TYP
MAX
UNIT
MHz
pF
10
25
MARKING
XY= Date Code
CJD3439Rev300606E
Continental Device India Limited
150
15
0.12
VALUE
350
450
5.0
0.3
8.33
CDIL
CJD3439
XY MX
- 65 to +150
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CJD350 | 制造商:Central Semiconductor Corp 功能描述:HIGH VOLTAGE PNP SM POWER TRANSISTOR DPAK 15W - free partial T/R at 500. |
| CJD3O | 制造商:Greenlee Textron Inc 功能描述:JAW UNIT,CRIMP (PKGD CJD3O) |
| CJD41C | 制造商:Central Semiconductor Corp 功能描述:General Purpose NPN SM POWER TRANSISTOR DPAK 20W - free partial T/R at 500. |
| CJD41C TR13 | 功能描述:TRANS NPN 100V 6A DPAK 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:6A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 600mA，6A 電流 - 集電極截止（最大值）:50μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:15 @ 3A，4V 功率 - 最大值:1.75W 頻率 - 躍遷:3MHz 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
| CJD41C_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS |
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