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參數(shù)資料
| 型號： | CJDX136D |
| 廠商： | Continental Device India Limited |
| 英文描述： | TRIAC |
| 中文描述： | 可控硅 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 285K |
| 代理商： | CJDX136D |
TRIAC
CJDX136D
TO-251 ( I PAK)
Plastic Package
For use in high bidirectional transient and blocking voltage applications, and for high thermal
cycling performance. Typical Applications include Motor Control, Industrial and Domestic
Lighting, Heating and Static Switching.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive Peak Off State Voltage
RMS on State Current
Non Repetitive Peak on State Current
SYMBOL
*V
DRM
I
T (RMS)
I
TSM
TEST CONDITION
UNIT
V
A
full sine wave, T
mb
<107oC
full sine wave, T
J
=25oC prior to
t=20ms
t=16.7ms
t=10ms
A
A
A
2
s
l
2
t for Fusing
Repetitive Rate of Rise of on State
Current After Triggering
I
2
t
dl
T
/dt
I
TM
=6A, I
G
=0.2A, dl
G
/dt=0.2A/
μ
s
T2+ G+
T2+ G-
T2- G-
T2- G+
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
oC
oC
Peak Gate Current
Peak Gate Voltage
Peak Gate Power
Average Gate Power
Storage Temperature
Operating Junction Temperature
*The rate of rise of current should not excees 3A/
I
GM
V
GM
P
GM
P
G (AV)
T
stg
T
j
Over any 20ms period
- 40 to +150
125
m
s
THERMAL RESISTANCE
Junction to Mounting Base
R
th (j-mb)
full cycle
half cycle
in free air
K/W
K/W
K/W
Junction to Ambient (typical)
R
th (j-a)
ELECTRICAL CHARACTERISTICS (T
J
=25oC unless specified otherwise)
PARAMETER
Gate Trigger Current
SYMBOL
I
GT
TEST CONDITION
V
D
=12V, I
T
=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN
MAX
UNIT
5.0
5.0
5.0
10
mA
mA
mA
mA
MARKING
CJDX
136D
XY MX
XY= Date Code
CJDX136DRev100706E
5.0
5.0
0.5
3.0 max
3.7 max
60 typ
VALUE
600
4.0
25
27
3.1
50
50
50
10
2.0
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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