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參數(shù)資料
| 型號： | CJD86 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR TRANSISTOR |
| 中文描述： | NPN硅平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 149K |
| 代理商： | CJD86 |
NPN SILICON PLANAR TRANSISTOR
CJD86
DPAK (TO-252)
Plastic Package
For High Speed Switching Application
ABSOLUTE MAXIMUM RATINGS (T
c
=25oC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Mounted on Ceramic Board (250mm
2
X 8.0 mm)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
UNITS
V
V
V
A
A
W
W
T
j
oC
oC
T
stg
*These ratings are applicable when surface mounted on the minimum pad sizes recommended. (see page no 3)
ELECTRICAL CHARACTERISTICS (T
c
=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
SYMBOL
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
*h
FE
TEST CONDITION
I
C
=1mA, I
B
=0
I
C
=10
μ
A, V
CE
=2V
I
E
=10
μ
A, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
= 0
**I
C
=100mA, V
CE
=2V
I
C
=3A, V
CE
=2V
MIN
50
60
6.0
TYP
MAX
UNITS
V
V
V
μ
A
μ
A
1.0
1.0
560
100
35
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
T
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
150
25
MHz
pF
C
ob
**h
FE
Classifications
R : 100 - 200, S : 140 - 280, T : 200 - 400, U : 280 - 560
MARKING
CDIL
MJD86
XY MX
XY= Date Code
**Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2%
CJD86Rev100605E
VALUE
60
50
6.0
3.0
6.0
1.5
0.5
XY MX
XY MX XY MX XY MX
CDIL CDIL CDIL
MJD86R MJD86S MJD86T
CDIL
MJD86U
150
- 55 to +150
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Continental Device India Limited
Data Sheet
Page 1 of 4
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