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參數(shù)資料
| 型號(hào)： | CGY2032BTS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DECT 500 mW power amplifier(DECT 500 mW 功率放大器) |
| 中文描述： | 1880 MHz - 1900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SSOP-16 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | CGY2032BTS |
2000 Mar 14
6
Philips Semiconductors
Preliminary specification
DECT 500 mW power amplifier
CGY2032BTS
APPLICATION INFORMATION
The CGY2032BTS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage
switching is achieved by a single bipolar PNP transistor.
handbook, full pagewidth
FCA082
CGY2032BTS
8
5
1
9, 10
6, 7
15
2, 3, 4
12, 13, 14
TRL4
(4)
22 pF
33 pF
1 nF
6.8 pF
1.8 pF
10
μ
F
6.8 pF
TRL1
(1)
TRL2
(2)
TRL3
(3)
OPM
GND3
GND2
GND1
VDD3
VDD2
VDD1
RFO
RFI
11
16
47 k
10 k
82
220
VDD
BC807
BC849C
control
150 pF
Fig.5 Evaluation board circuit diagram.
Thickness: 0.8 mm; substrate: FR4;
ε
r
= 4.7.
(1) TRL1: width = 500
μ
m; length = 10 mm.
(2) TRL2: width = 500
μ
m; length = 1 mm.
(3) TRL3: width = 500
μ
m; length = 8 mm.
(4) TRL4: adjusted for optimum matching; width = 500
μ
m; length = 1 to 3 mm.
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