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參數(shù)資料
| 型號(hào)： | CGY2032BTS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DECT 500 mW power amplifier(DECT 500 mW 功率放大器) |
| 中文描述： | 1880 MHz - 1900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SSOP-16 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 61K |
| 代理商： | CGY2032BTS |
2000 Mar 14
4
Philips Semiconductors
Preliminary specification
DECT 500 mW power amplifier
CGY2032BTS
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with “MIL STD 883C - method 3015”
THERMAL CHARACTERISTICS
Note
1.
On Philips evaluation board, R
th(j-a)
value is typically 80 K/W.
DC CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
AC CHARACTERISTICS
V
DD
= 3.2 V; f
RF
= 1900 MHz; P
i
= 0 dBm; T
amb
= 25
°
C; duty factor
δ
= 50%; 50
impedance system; measured and
guaranteed on the CGY2032BTS evaluation board; the circuit diagram is shown in Fig.5.
Note
1.
The device is adjusted to provide nominal load power into a 50
load. The device is switched off and a 3 : 1 load
replaces the 50
load. The device is switched on and the phase of the 3 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air; note 1
145
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins V
DD1
, V
DD2
and V
DD3
V
DD
I
DD0
positive supply voltage
positive peak supply current
1.8
3.2
4.2
800
V
mA
V
DD
= 3.2 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
5
26.5
24
TYP.
MAX.
UNIT
P
i
δ
P
o
input power
duty factor
output power
0
50
27.5
25
350
55
40
60
+5
100
29
27
500
400
35
30
35
dBm
%
dBm
dBm
mA
mA
%
dBm
dBc
dBc
dBc
V
DD
= 3.2 V
V
DD
= 2.2 V
V
DD
= 3.2 V
V
DD
= 2.2 V
I
DD
total drain current
η
P
leak
H2
H3
Stab
efficiency
RF leakage to output in power off state
second harmonic level
third harmonic level
stability (spurious levels)
V
DD
= 0 V
note 1
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