參數(shù)資料
型號(hào): CGY2032BTS
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: DECT 500 mW power amplifier(DECT 500 mW 功率放大器)
中文描述: 1880 MHz - 1900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: PLASTIC, SSOP-16
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 61K
代理商: CGY2032BTS
2000 Mar 14
2
Philips Semiconductors
Preliminary specification
DECT 500 mW power amplifier
CGY2032BTS
FEATURES
Power Amplifier (PA) overall efficiency 55%
27.5 dBm saturated output power at 3.2 V
0 dBm input power
40 dB linear gain
Operation without negative supply
Wide operating temperature range
30 to +85
°
C
SSOP16 package.
APPLICATIONS
1.88 to 1.9 GHz transceivers for DECT applications
2 GHz transceivers: Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS).
GENERAL DESCRIPTION
The CGY2032BTS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
Note
1.
For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
BLOCK DIAGRAM
SYMBOL
PARAMETER
(1)
MIN.
30
TYP.
MAX.
+85
UNIT
V
DD
I
DD
P
o
T
amb
positive supply voltage
total drain current
output power
ambient temperature
3.2
350
27.5
V
mA
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2032BTS
SSOP16
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
handbook, halfpage
FCA080
9,10
6, 7
2, 3, 4
12, 13, 14
11
8
5
16
15
1
RFI
VDD1
GND1
GND2 GND3
VDD2VDD3
RFO
OPM
CGY2032BTS
Fig.1 Block diagram.
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