參數(shù)資料
型號(hào)： CGY2021G
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： DCS/PCS 2 W power amplifier
中文描述： 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
文件頁數(shù)： 7/12頁
文件大?。?/td> 78K
代理商： CGY2021G
1997 Apr 03
7
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
CGY2021G
AC CHARACTERISTICS
V
DD
= 4.5 V; T
amb
= 25
°
C; general operating conditions applied; unless otherwise specified.
Measured and guaranteed on CGY2021G evaluation board.
Notes
1.
2.
Including the 82
resistor connected in parallel at the power amplifier input on the evaluation board.
The device is adjusted to provide nominal value of load power into a 50
load. The device is switched off and a 6 : 1
load replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 seconds test period.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Power amplifier
P
i
S
11
f
RF
input power
input return loss
RF frequency range
2
1710
1850
33
31
40
34
50
47
6
11
+2
10
1785
1910
dBm
dB
MHz
MHz
dBm
dBm
%
%
pF
50
source; note 1
DCS
PCS
T
amb
= 25
°
C; V
DD
= 4.5 V
T
amb
=
20 to +85
°
C; V
DD
= 4.2 V
DCS; at P
o(max)
PCS; at P
o(max)
P
o(max)
maximum output power
η
efficiency
R
S
C
S
optimum series load resistance
optimum series load
capacitance
isolation
output noise in RX band
2nd harmonic level
3rd harmonic level
stability
P
o(off)
N
RX
H2
H3
Stab
PA OFF; P
i
= 0 dBm
50
40
35
121
50
dBm
dBm/Hz
dBc
dBc
dBc
note 2
Power sensor driver
P
o(DET)
sensor driver output power
R
L
= 100
; relative to PA output
power into 50
load
25
dBc
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