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參數(shù)資料
| 型號(hào)： | CGY2021G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DCS/PCS 2 W power amplifier |
| 中文描述： | 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 78K |
| 代理商： | CGY2021G |
1997 Apr 03
2
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
CGY2021G
FEATURES
Power Amplifier (PA) overall efficiency 50% (DCS)
34 dB gain
0 dBm input power
Gain control range >50 dB
Integrated power sensor driver
Low output noise floor of PA <
121 dBm/Hz in
DCS/PCS RX band
Wide operating temperature range
20 to +85
°
C
LQFP 48-pin package
Compatible with power ramping controller PCA5077 and
GaAs PA power modulator UBA1710.
APPLICATIONS
Hand-held transceivers for DCS/PCS applications
(DCS: 1710 to 1785 MHz and PCS:
1850 to 1910 MHz)
1800 MHz Time Division Multiple Access (TDMA)
systems.
GENERAL DESCRIPTION
The CGY2021G is a DCS/PCS class 1 GaAs Monolithic
Microwave Integrated Circuit (MMIC) power amplifier
specifically designed to operate at 4.8 V battery supply.
The chip also includes a power sensor driver so that no
directional coupler is required in the power control loop.
The PA requires only a simple low-pass filter to comply
with the DCS/PCS transmit spurious specification. It can
be switched off and its power controlled by monitoring the
actual drain voltage applied to the amplifier stages.
QUICK REFERENCE DATA
Note
1.
For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
SYMBOL
PARAMETER
(1)
MIN.
TYP.
MAX.
UNIT
V
DD
I
DD
P
o(max)
T
amb
positive supply voltage
positive peak supply current
maximum output power
operating ambient temperature
20
4.5
1.4
34
+85
V
A
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2021G
LQFP48
plastic low profile quad flat package; 48 leads; body 7
×
7
×
1.4 mm
SOT313-2
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