參數資料
型號: CGH40025F
廠商: CREE INC
元件分類: 功率晶體管
英文描述: 25 W, RF Power GaN HEMT
中文描述: C BAND, GaN, N-CHANNEL, RF POWER, HEMFET
封裝: ROHS COMPLIANT PACKAGE-2
文件頁數: 2/12頁
文件大?。?/td> 959K
代理商: CGH40025F
2
CGH40025 Rev .0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V
DSS
V
GS
T
STG
T
J
I
GMAX
T
S
84
Volts
Gate-to-Source Voltage
-10, +2
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
175
C
Maximum Forward Gate Current
4.0
mA
Soldering Temperature
245
C
Thermal Resistance, Junction to
Case
1
R
θ
JC
3.8
C/W
Note:
1
Measured for the CGH40025F at P
DISS
= 28 W.
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
2
Gate Threshold Voltage
V
GS(th)
-3.0
-2.5
-1.8
VDC
V
DS
= 10 V, I
D
= 7.2 mA
Gate Quiescent Voltage
V
GS(Q)
-2.0
VDC
V
DS
= 28 V, I
D
= 250 mA
Saturated Drain Current
I
DS
4.8
5.4
A
V
DS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
V
BR
84
100
VDC
V
GS
= -8 V, I
D
= 7.2 mA
Case Operating Temperature
T
C
-10
+65
C
Screw Torque
T
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics (T
C
= 25
C, F
0
= 3.7 GHz unless otherwise noted)
Small Signal Gain
G
SS
13
dB
V
DD
= 28 V, I
DQ
= 250 mA
Power Output at 3 dB
Compression
P
3dB
30
W
V
DD
= 28 V, I
DQ
= 250 mA
Drain Efficiency
1
η
62
%
V
DD
= 28 V, I
DQ
= 250 mA, P
3dB
Output Mismatch Stress
VSWR
TBD
Y
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 250 mA,
P
OUT
= 12 W CW
Dynamic Characteristics
Input Capacitance
C
GS
9.3
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
C
DS
2.0
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
C
GD
0.9
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
/ P
2
Measured on wafer prior to packaging.
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