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參數(shù)資料
| 型號(hào)： | CEPF630B |
| 英文描述： | 200V N Channel MOS |
| 中文描述： | 200伏?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 42K |
| 代理商： | CEPF630B |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =9A
1.5
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
4-39
Figure 1. Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
I
D
,
I
D
,
b
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
4
550
P
F
100
P
F
P
F
30
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
4
CEPF630B/CEBF630B
0.1
1
2
4
6
10
8
25 C
-55 C
150 C
1.V
DS
=40V
2.Pulse Test
10
18
15
12
9
6
3
0
0
2
4
6
8
V
GS
=10,9,8V
V
GS
=7V
V
GS
=6V
V
GS
=5V
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