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參數(shù)資料
| 型號： | CEBF630B |
| 英文描述： | 200V N Channel MOS |
| 中文描述： | 200伏?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEBF630B |
200
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
200V , 9A , R
DS(ON)
= 0.4
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
@V
GS
=10V.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
9
A
I
DM
A
Drain-Source Diode Forward Current
I
S
9
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperautre Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
1.7
62.5
/W
C
/W
C
@Tc=25 C
Derate above 25 C
74
0.59
Drain Current-Continuous
S
G
D
4-37
PRELIMINARY
36
CEPF630B/CEBF630B
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
G
S
S
D
D
G
4
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