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參數(shù)資料
| 型號(hào)： | CEPF630B |
| 英文描述： | 200V N Channel MOS |
| 中文描述： | 200伏?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | CEPF630B |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= 250
μ
A
200
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200V, V
GS
= 0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
30V, V
DS
= 0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 4.5A
0.4
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
7
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=40V, I
D
= 4.5A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=100V,
I
D
= 9A,
V
GS
= 10V
R
GEN
=25
25
50
ns
ns
ns
ns
84
150
72
77
130
140
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=160V, I
D
= 9A,
V
GS
=10V
22
29
nC
nC
nC
Fall Time
4-38
E
AS
I
AS
V
DD
=50V, L=3mH
R
G
=25
A
mJ
9
150
12
9
3
4
CEPF630B/CEBF630B
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