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參數(shù)資料
| 型號： | CEP9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CEP9926 |
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
V
G
,
B
D
,
D
I
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
4-140
CEP9926/CEB9926
1.09
1.06
1.03
1.00
0.94
0.97
0.91
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
30
24
18
12
36
0
0
3
6
9
12
15
6
V
DS
=10V
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
=25 C
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
I
D
,
300
200
100
10
0.5
0.1
1
1
10
30
60
V
GS
=4.5V
Single Pulse
Tc=25 C
R
DS
(ON Lmt
DC
100ms
10ms
1ms
4
5
3
2
1
0
0
3
6
9
12
15
18
21
24
V
DS
=10V
I
D
=6A
4
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