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參數(shù)資料
| 型號(hào)： | CEP9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CEP9926 |
CEP9926/CEB9926
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
0.72
1.2
V
b
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
I
D
,
C
O
R
D
,
I
D
,
4-139
5
Tj=125 C
25 C
-55 C
0.06
0.05
0.03
0.01
0.04
0.02
0.00
0
5
10
15
20
V
GS
=4.5V
0
2
4
6
8
10
12
Ciss
Coss
Crss
3000
2500
2000
1500
1000
500
0
25
20
15
10
5
0
0
1
2
3
4
5
6
V
GS
=4.5,3.5,2.5V
V
GS
=1.5V
25 C
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
-55 C
Tj=125 C
4
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