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參數(shù)資料
| 型號(hào)： | CED9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | CED9926 |
CED9926/CEU9926
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
V
G
g
F
,
V
G
,
B
D
,
D
I
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
6-85
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
5
0
1
2
3
4
0
3
6
9
12
V
DS
=10V
I
D
=8A
50
10
1.0
0.1
0.6
0.8
1.0
1.2
1.4
20
16
12
8
4
0
0
3
6
9
12
V
DS
=10V
10
10
-1
10
1
0
10
1
10
-2
10
0
10
-1
10
2
10
2
T
A
=25 C
R
=
50 C/W
Single Pulse
DC
10ms
10s
1s
100ms
R
DS
(ONLmt
6
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
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