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參數(shù)資料
| 型號(hào)： | CED9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | CED9926 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 4A
1.3
V
a
Notes
a.Pulse Test:Pulse Width 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
I
D
,
I
D
,
6-84
CED9926/CEU9926
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
15
12
9
6
3
00.5
1
1.5
2
2.5
25 C
Tj=125 C
-55 C
30
25
20
15
10
5
0
0
1
2
4
3
V
GS
=1.5V
V
GS
=2V
V
GS
=2.5V
V
GS
=4.5,3.5,3V
6
0
5
10
15
20
Ciss
Coss
Crss
0
1000
800
600
400
200
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=4.5V
I
D
=8A
150
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