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參數(shù)資料
| 型號： | CED9926 |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 57K |
| 代理商： | CED9926 |
CED9926/CEU9926
ELECTRICAL CHARACTERISTICS (T
C
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D=
250
μ
A
20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 12V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
0.5
1.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=8A
30
m
m
V
GS
=2.5V, I
D
= 6.6A
40
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
= 4.5V
26
15
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=8A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
500
P
F
300
P
F
P
F
140
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A
V
GS
= 4.5V,
R
GEN
=6
20
40
ns
ns
ns
ns
18
40
60
28
108
56
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
nC
nC
nC
C
Fall Time
6-83
4
10
2.9
15
V
DS
= 10V,I
D
= 8A
V
GS
= 4.5V
6
2.3
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