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參數(shù)資料
| 型號(hào)： | CEB81A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | CEB81A3 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =50A
1.3
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
4-134
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
CEP81A3/CEB81A3
120
105
90
75
60
45
30
15
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,6,5,4V
V
GS
=3V
V
GS
=2V
R
D
,
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
Ciss
Coss
Crss
6000
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
-55 C
48
60
36
24
12
0
1
1.5
2
2.5
3.5
3
4
25 C
T
J
=125 C
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=10V
I
D
=50A
150
4
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